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mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 1 of 11 march /1 2 features and benefits ? wide operating voltage range : from 2.7v to 24v ? very wide range for magnetic sensitivity ? chopper - stabilized amplifier stage ? programmable built - in negative temperature coefficient ? reverse supply voltage protection ? under - voltage lockout protection ? thermal protection ? high esd rating / excellent emc performance ? thin sot23 3l green compliant package application examples ? automotive, consumer and industrial ? wiper motor ? window lifter ? doorlock ? seatbelt buckle ? seat positioning ? sunroof/tailgate opener ? electrical power steering ordering information part no. temperature code package code comment mlx9222 1 lse - aaa - 00 2 - re l ( - 40c to 150c) se (tsot - 3l) re (reel) - bhfs 1 functional diagram 2 general description the mel exis mlx9222 1 is the new generation hall - effect switch designed in mixed signal submicron cmos technology. the device integrates a voltage regulator, hall sensor with advanced offset cancellation system and a current sink - configured output driver, all in a single package. based on a brand new platform, the magnetic core is using an improved offset cancellation system allowing faster and more accurate processing while being temperature insensitive and stress independent. in addition a temperature coeffici ent is implemented to compensate the natural behaviour of certain types of magnets becoming weaker with rise in temperature. the included voltage regulator operates from 2.7 to 24v, hence covering a wide range of applications. with the built - in reverse v oltage protection, a serial resistor or diode on the supply line is not required so that even remote sensors can be specified for low voltage operation down to 2.7v while being reverse voltage tolerant. in an event of a drop below the minimum supply volta ge during operation, the under - voltage lock - out protection will automatically freeze the device, preventing the electrical perturbation to affect the magnetic measurement circuitry. the output current state is therefore only updated based on a proper and a ccurate magnetic measurement result. the two - wire interface not only saves one wire, but also allows implementation of diagnostic functions as reverse polarity connection and malfunction detection. the on - chip thermal protection also switches off the out put if the junction temperature increases above an abnormally high threshold. it will automatically recover once the temperature decreases below a safe value. with switching magnetic characteristics the supply current state is turned high by a sufficientl y strong field facing the package branded side. toggling the state of the supply current from high to low is possible by applying low or no magnetic field. the mlx9222 1 is delivered in a green and rohs compliant plastic single - in - line (to - 92 flat) for th rough - hole mount or pcb - less design or in 3 - pin thin small outline transistor (tsot) for surfacemount process v d d g n d o u t p u t c u r r e n t s i n k c o n t r o l v o l t a g e r e g u l a t o r w i t h r e v e r s e p o l a r i t y p r o t e c t i o n c d s a m p l i f i e r s w i t c h e d h a l l p l a t e t r i m m i n g r e g i s t e r u n d e r - v o l t a g e l o c k o u t t h e r m a l p r o t e c t i o n b o p / b r p r e f e r e n c e t e m p e r a t u r e c o m p e n s a t i o n t e s t
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 2 of 11 march /1 2 table of contents 1 functional diagram ................................ ................................ ................................ .................... 1 2 general description ................................ ................................ ................................ .................... 1 3 absolute maximum ratings ................................ ................................ ................................ ....... 3 4 general electrical specifications ................................ ................................ ............................... 4 5 magnetic specifications ................................ ................................ ................................ ............. 5 6 magnetic behaviour ................................ ................................ ................................ .................... 5 6.1 latch sensor ................................ ................................ ................................ ................................ .............................. 5 7 performance graphs ................................ ................................ ................................ ................... 6 7.1 b op and b rp vs. t j ................................ ................................ ................................ ................................ ..................... 6 7.2 b op and b rp vs. v dd ................................ ................................ ................................ ................................ ................... 6 7.3 i off vs. tj ................................ ................................ ................................ ................................ ................................ ... 6 7.4 i off vs. v dd ................................ ................................ ................................ ................................ ................................ . 6 7.5 i on vs.t j ................................ ................................ ................................ ................................ ................................ ..... 6 7.6 i on vs vdd ................................ ................................ ................................ ................................ ................................ . 6 7.7 vdd derating se package ................................ ................................ ................................ ................................ ......... 7 8 application information ................................ ................................ ................................ .............. 8 8.1 typical automotive application circuit ................................ ................................ ................................ ....................... 8 8.2 automotive and harsh, noisy environments application circuit ................................ ................................ ................ 8 8.3 strobb ing vdd application (used for reduced self - heating) ................................ ................................ ....................... 8 9 standard information regarding manufacturability of melexis products with different soldering processes ................................ ................................ ................................ ...................... 9 10 e sd precautions ................................ ................................ ................................ ....................... 9 11 se (tsot - 3l) package information ................................ ................................ ....................... 10 12 disclaimer ................................ ................................ ................................ ................................ 11
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 3 of 11 march /1 2 3 absolute maximum r atings parameter symbol value units supply voltage ( 1 , 2 ) v dd +27v v supply current ( 1 , 2 , 3 ) i dd +20 ma supply current ( 1 , 4 , 3 ) i dd +50 ma reverse supply voltage ( 1 , 2 ) v ddrev - 24 v reverse supply current ( 1 , 2 , 5 ) i ddrev - 20 ma reverse supply current ( 1 , 4 , 5 ) i ddrev - 50 ma maximum junction temperature ( 6 ) t j +165 c esd sensitivity C hbm ( 7 ) - 3 000 v esd sensitivity C mm ( 8 ) - 4 00 v esd sensitivity C cdm ( 9 ) - 1000 v magnetic flux density b unlimited mt exceeding the abs olute maximum ratings may cause permanent damage. exposure to absolute - maximum - rated conditions for extended periods may affect device reliability. 1 the maximum junctio n temperature should not be exceeded 2 for maximum 1 hour 3 including current through protection device 4 for maximum 500ms 5 through protection device 6 for 1000 hours. 7 human model according aec - q100 - 002 standard 8 machine model according aec - q100 - 003 s tandard 9 charged device model according aec - q100 - 011 standard
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 4 of 11 march /1 2 4 general electrical specifications dc operating parameters v dd = 3.5 to 24v, t j = - 40c to 1 65 c (unless ot herwise specified) parameter symbol test conditions min typ ( 1 ) max units supply voltage v dd operating 2.7 - 24 v start - up supply current i start 1.5 - 5 ma power - on time ( 2 , 3 ) t on v dd = 5v, dv dd /dt > 2v/us - 4 0 7 0 s power - on state - supply current state after t o n , b=null i off - off supply current i off 5 - 6.9 ma on supply current i on 12 - 17 ma supply current rise/ f all time t r ise/fall from 10% to 90% , no bypass capacitor 0.1 0.3 1 us chopping frequency f chop 26 0 340 - khz refresh period t per - 7.5 - s delay time ( 4 ) t d b > 3* b op , average value for 1000 successive switching events @1khz - 7.5 - s output jitter (p - p) t jitter b > 3* b op , over 1000 successive switching events @1khz - 3 .3 - s maximum swit ching frequency ( 5 ) f sw b > 3* b op 30 50 - khz under - voltage lockout threshold v uvl - - 2. 7 v under - voltage lockout reaction time t uvl - 1 - s thermal protection threshold tsd on junction temperature - 19 0 - c thermal protection release tsd off juncti on temperature - 1 80 - c safe mode supply current i tp thermal protection activated - - 0. 8 ma reverse supply current iddrev vdd = - 16v 1 ma tsot package thermal resistance rth single layer (1s) jedec board, zero lfpm 3 00 c/w 1 typical values are defined at ta = +25oc and vdd = 12v 2 the power - on time represents the time from reaching vdd = 2.7v to the first refresh of the supply current state. 3 power - on slew rate should not be critical for the proper device start - up. 4 delay time is the time from magneti c threshold reached to the start of the supply current switching 5 maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 5 of 11 march /1 2 5 magnetic specifica tions magnetic & temperature coefficient option code combination test conditions operating point b op (mt) release point b rp (mt) temperature coefficient (ppm/ o c) min typ max min typ max typ high sensitivity + ndfeb tc match t j = - 40c 4.1 6.8 9.6 - 9 .6 - 6.8 - 4.1 - 2000 t j = 25c 4.1 6 7.9 - 7.9 - 6 - 4.1 t j = 150c 1.8 4.5 7.1 - 7.1 - 4.5 - 1.8 table 1 : magnetic switching points & temperature coefficient combination temperature coefficient is calculated using the following formula: 6 magnetic behaviour 6.1 latch sensor parameter pole active option 1 south note: latch sensor are inherently direct south or direct north pole active only. fig.1 C c t c t c ppm t t b b b o o o c op opt opt o 150 ; 25 ; / , 10 * 2 1 6 1 2 25 1 2 f l u x d e n s i t y c u r r e n t l e v e l b o p b r p 0 m t i d d = i o n i d d s w i t c h e s t o l o w i d d s w i t c h e s t o h i g h i d d = i o f f
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 6 of 11 march /1 2 7 performance g raphs 7.1 b op and b rp vs. t j 7.2 b op and b rp vs. v dd 7.3 i off vs. tj 7.4 i off vs. v d d 7.5 i on vs.t j 7.6 i on vs vdd
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 7 of 11 march /1 2 7.7 vdd derating se package
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 8 of 11 march /1 2 8 application information 8.1 typical automotive application circuit 8.2 automot ive and harsh, noisy environments application circuit 8.3 strobbing vdd application (used for reduced self - heating) c 1 68 nf vdd gnd test r sense v cc mlx 92221 ecu vh sense 100 notes : 1 . given strobe timing is exemplary only . the output response is for sensor type mlx 92221 xxx - xlxs . 2 . for proper operation , a 10 nf to 100 nf bypass capacitor should be placed as close as possible to the v dd and ground pin . t t v dd i dd i ontyp i offtyp 12 v south pole weak south or b = null on phase off phase ( 1 ms ) ( 1 s ) valid i dd state t on t on valid i dd state c 1 68 nf vdd gnd test r sense v cc mlx 92221 ecu vh sense 100 notes : 1 . for proper operation , a 10 nf to 100 nf bypass capacitor should be placed as close as possible to the v dd and ground pin . 2 . the device could tolerate negative voltage down to - 2 4 v , so i f negative transients over supply line v peak < - 29 v are expected , usage of the diode d 1 is recommended . otherwise only r sense is sufficient . when selecting the resistor r sense , three points are imp ortant : - the resistor has to limit i dd / i ddrev to 50 ma maximum - the resistor has to withstand the power dissipated in both over voltage conditions ( v rsense 2 / r sense ) - the resulting device supply voltage v dd ha s to be higher than v dd min ( v dd = v cc C r sense . i dd ) 3 . the device could tolerate positive supply voltage up to + 27 v ( until the maximum power dissipation is not exceeded ) , so i f positive transients over supply line with v peak > 32 v are expected , usage a zener diode dz 1 is recommended . the r sense - dz 1 network should be sized to limit the voltage over the device below the maximum allowed . dz 1 ( optional , see n ote 3 ) d 1 ( optional , see note 2 ) c 1 1 0 n f v d d g n d t e s t r s e n s e v c c n o t e s : 1 . f o r p r o p e r o p e r a t i o n , a 1 0 n f b y p a s s c a p a c i t o r s h o u l d b e p l a c e d a s c l o s e a s p o s s i b l e t o t h e v d d a n d g r o u n d ( g n d ) p i n . f o r c o m p l e t e e m i s s i o n s p r o t e c t i o n a c 1 = 6 8 n f i s r e c o m m e n d e d . 2 . t h e t e s t p i n i s t o b e l e f t o p e n o r c o n n e c t e d t o g n d . m l x 9 2 2 2 1 e c u v h s e n s e 1 0 0
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 9 of 11 march /1 2 9 standard information regarding manufacturability of melexis products with different soldering processe s our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: reflow soldering smds ( s urface m ount d evices) ipc/jedec j - std - 020 moisture/r eflow sensitivity classification for nonhermetic solid state surface mount devices (classification reflow profiles according to table 5 - 2) eia/jedec jesd22 - a113 preconditioning of nonhermetic surface mount devices prior to reliability testing (reflow prof iles according to table 2) wave soldering smds ( s urface m ount d evices) and thds ( t hrough h ole d evices) en60749 - 20 resistance of plastic - encapsulated smds to combined effect of moisture and soldering heat eia/jedec jesd22 - b106 and en60749 - 15 resistanc e to soldering temperature for through - hole mounted devices iron soldering thds ( t hrough h ole d evices) en60749 - 15 resistance to soldering temperature for through - hole mounted devices solder ability smds ( s urface m ount d evices) and thds ( t hrough h ole d evices) eia/jedec jesd22 - b102 and en60749 - 21 solderability for all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualif ication tests have to be agreed upon with melexis. the application of wave soldering for smds is allowed only after consulting melexis regarding assurance of adhesive strength between device and board. http://www.melexis.com/assets/soldering - application - note - and - recommendations - 5446.aspx melexis is contributing to global environmental conservation by promoting lead free solutions. for more information on qualifications of rohs compliant products (rohs = european directive on the restriction of the use of certain hazardous substances) please visit the quality page on our website: http://www.melexis.com/quali ty.aspx 10 e sd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products.
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 10 of 11 march /1 2 11 se (tsot - 3l) package information se pin 1 vdd supply supply voltage pin 2 test i/o analog & digital i/o 3 gnd ground ground pin table 2 : se package p in out note: test pin to be left open or connected to gnd in the applicatio n 2 . 7 5 b s c 1 . 6 0 b s c 1 . 9 0 b s c 2 . 9 0 b s c 0 . 3 0 0 . 4 5 0 . 8 8 + 0 . 0 2 - 0 . 0 3 1 . 0 0 m a x 0 . 9 5 b s c 0 . 0 7 5 + 0 . 0 2 5 - 0 . 0 5 0 s e a t i n g p l a n e 0 . 5 7 5 r e f . 0 . 4 0 + / - 0 . 1 0 0 . 5 0 b s c 0 . 1 2 7 + 0 . 0 2 3 - 0 . 0 0 7 0 . 1 5 0 . 2 0 w i t h p l a t i n g ~ b a s e m e t a l s e c t i o n b - b b b n o t e s : 1 . a l l d i m e n s i o n s a r e i n m i l l i m e t e r s 2 . o u t e r m o s t p l a s t i c e x t r e m e w i d t h d o e s n o t i n c l u d e m o l d f l a s h o r p r o t r u s i o n s . m o l d f l a s h a n d p r o t r u s i o n s s h a l l n o t e x c e e d 0 . 1 5 m m p e r s i d e . 3 . o u t e r m o s t p l a s t i c e x t r e m e l e n g t h d o e s n o t i n c l u d e m o l d f l a s h o r p r o t r u s i o n s . m o l d f l a s h a n d p r o t r u s i o n s s h a l l n o t e x c e e d 0 . 2 5 m m p e r s i d e . 4 . t h e l e a d w i d t h d i m e n s i o n d o e s n o t i n c l u d e d a m b a r p r o t r u s i o n . a l l o w a b l e d a m b a r p r o t r u s i o n s h a l l b e 0 . 0 7 m m t o t a l i n e x c e s s o f t h e l e a d w i d t h d i m e n s i o n a t m a x i m u m m a t e r i a l c o n d i t i o n . 5 . d i m e n s i o n i s t h e l e n g t h o f t e r m i n a l f o r s o l d e r i n g t o a s u b s t r a t e . 6 . d i m e n s i o n o n s e c t i o n b - b a p p l i e s t o t h e f l a t s e c t i o n o f t h e l e a d b e t w e e n 0 . 0 8 m m a n d 0 . 1 5 m m f r o m t h e l e a d t i p . 7 . f o r m e d l e a d s h a l l b e p l a n a r w i t h r e s p e c t t o o n e a n o t h e r w i t h 0 . 0 7 6 m m a t s e a t i n g p l a n e . m a r k i n g : t b d s e e n o t e 2 s e e n o t e 3 s e e n o t e 5 1 2 r e f . t y p . 0 . 3 5 + 0 . 0 5 - 0 . 1 0 0 . 3 0 0 . 4 5 0 . 1 0 r . m i n . 0 . 2 0 4 + / - 4 0 . 1 0 r . m i n . s e e n o t e 6 s e a t i n g p l a n e t o p v i e w e n d v i e w s i d e v i e w h a l l p l a t e l o c a t i o n n o t e s : 1 . a l l d i m e n s i o n s a r e i n m i l l i m e t e r s t o p v i e w e n d v i e w p a c k a g e l i n e 1 . 5 1 0 . 8 0 0 . 2 8
mlx92221lse - aaa - 002 2 - wire hall effect latch 390109222 1 02 rev. 1 page 11 of 11 march /1 2 12 disclaimer devices sold by melexis are covered by the warranty and patent indemnification provisions appearing in its term of sale. melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom o f the described devices from patent infringement. melexis reserves the right to change specifications and prices at any time and without notice. therefore, prior to designing this product into a system, it is necessary to check with melexis for current inf ormation. this product is intended for use in normal commercial applications. applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life - support or life - sustaining equipment are specifically not recommended without additional processing by melexis for each application. the information furnished by melexis is believed to be correct and accurate. however, melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, per formance or use of the technical data herein. no obligation or liability to recipient or any third party shall arise or flow out of melexis rendering of technical or other services. ? 2012 melexis nv. all rights reserved. for the la test version of this document, go to our website at www.melexis.com or for additional information contact melexis direct: europe, africa: americas: asia: phone: +32 1367 0495 phone: +1 248 - 306 - 5400 phone: +32 1367 0495 e - mail: sales_europe@melexis.com e - mail: sales_usa@melexis.com e - mail: sales_asia@melexis.com iso/ts 16949 and iso14001 certified

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